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Abstract It is significant to develop stretchable electronics based on silicon materials for practical applications. Although various stretchable silicon structures have been reported, electronic systems based on them exhibit limited stretchability due to the constraints between them and polymer substrates. Here, an innovative strategy of deformation mismatch is proposed to break the constraints between silicon structures and polymers and effectively reduce the strain concentration in silicon structures. As a result, encapsulated serpentine silicon strips (S‐Si strips) achieve unprecedented stretchability, exceeding 120%. The encapsulated S‐Si strip also exhibits remarkable mechanical stability and durability, enduring 100 000 cycles of 100% stretch without fracture. The effect of key parameters, including the central angle, thickness, and width of the S‐Si strip, on the deformation mismatch is revealed through combing experiments and theoretical analysis, which will guide the rational implementation of the deformation mismatch strategy. Electrical testing showcases the strain‐insensitive nature and good electrical stability of encapsulated S‐Si strips, benefiting practical applications. This work provides a new paradigm of silicon materials with excellent stretchability and will facilitate the development of stretchable electronics.
Shi et al. (Mon,) studied this question.