Photoluminescence properties of two-dimensional semiconductor heterointerfaces

Two-dimensional metal-sulfur compounds have attracted much attention due to their novel physical properties, such as layered structure, ultrathin physical dimensions, and continuously tunable bandgap. The vertical stacking of different 2D semiconductors enables the heterojunction to retain the excellent properties of its constituent materials and has physical properties such as interlayer energy transfer and interlayer carrier transfer. In this paper, we utilize the carrier interlayer transfer properties of p-n heterojunctions and form heterojunctions using p-type Te and PdSe