Sb2Se3-GaSe eutectic composites were synthesized by the vertical Bridgman method. XRD analysis and structural study of the Sb2Se3-GaSe eutectics showed that Sb2Se3 inclusions were uniformly distributed in the GaSe matrice. Three eutectic points in the Sb2Se3-GaSe system were studied. The compositions of the three eutectics of 80, 55 and 40 wt.% Sb2Se3 formed in the Sb2Se3-GaSe systems, and the corresponding melting points of 776, 725 and 698 K were determined. Anisotropy of the electrical properties of the eutectic systems was observed. The anisotropy degree was ~103 depending on the crystallization direction.
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Kazımov et al. (2024) studied this question.
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