Annealing effect on the pyro-phototronic behaviour in Al/nanostructured PS-ML: p+-Si Schottky photovoltaic device

Abstract In the present study, effect of annealing in Al/nanostructured PS-ML: p⁺-Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365nm) illumination condition, as prepared device shows maximum enhancement and increment factor of 31.16% and 186% at \(0.5V\) compared to the devices annealed at temperature \(≥ 50^∘ C\). However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \(100^∘ C\). On further elevating the annealing temperature, the pyro-phototronic effect diminishes while photovoltaic effect remains. The device treated at \(150^∘ C\) shows enhancement in open circuit voltage (\({V}oc\)) value of \(± 841 mV\) with large value of fill factor (FF) of \(27%\) and power conversion efficiency (PCE) of \(9.63%\) and \(6.36%\) for upward and downward poling respectively.