Large-scale statistical analysis of defect emission in hBN: revealing spectral families and influence of flakes morphology

Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines, revealing 11 distinct defect families within the 1.6 to 2.2 eV energy range, challenging the hypotheses of a random energy distribution. These findings provide valuable insights to decipher the microscopic origin of emitters in hBN. The spectral spacing between defect families could serve as a key parameter for theoretical investigations We also explored the influence of hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods.