Electrothermal Modeling of Monolithically Integrated GaN-Based μ LED Devices

Monolithically integrated GaN devices have gained traction due to their lowered cost and suitability to produce large-scale optoelectronic and digital communication systems. To address the unavailability of realistic compact modeling of these devices and their circuitry, a framework for temperature-dependent finite element multiphysics simulation of high-density micro-light-emitting diodes ( <tex-math notation="LaTeX">μ</tex-math> LEDs) integrated with commercial high electron mobility transistors (HEMTs) has been developed. To incorporate the behavioral model extraction into Cadence, the multiphysics-based behavioral model is extracted in Verilog-A. Each proposed quantum well <tex-math notation="LaTeX">μ</tex-math> LED is individually modeled under varying temperature conditions, allowing for comprehensive analysis at both the behavioral and circuit-level regimes. This analysis is performed in Cadence Virtuoso design environment, comprising a driving HEMT, and a CMOS ASIC is subsequently proposed. The peak internal quantum efficiency (IQE) of each <tex-math notation="LaTeX">μ</tex-math> LED exhibits a variation of 0.046%/ <tex-math notation="LaTeX">ᵒ</tex-math> C with wide operational current densities of 0.01–450 A cm <tex-math notation="LaTeX">⁻²</tex-math> . This leads to the development of a definitive tool kit for the practical modeling of GaN-based devices, which can be further integrated with CMOS devices to facilitate optoelectronic circuit design.