IGBT power module based on pressureless nano-silver sintering optimization process and its performance characterization

In this paper, a nano-silver solder paste with a large intrinsic driving force was selected for pressureless sintering. The pressureless sintering process determined by simulated shear experiments was optimized according to the TGA results of this silver solder paste. Based on the optimized process, we realized the void-free and low-porosity sintering of large-area IGBT chips. At the same time, we used this process to fabricate complete silver sintered IGBT power modules. The silver sintered modules were characterized by static, dynamic, and thermal resistance levels, and their performance was compared with that of reflow soldered modules of the same power level. The final results indicate that the optimized process can solve the problem of voids and pore growth generated when the process determined by simulation shear experiments is directly applied to real chip sintering. The module using this process has excellent electrical performance, and the thermal resistance is reduced by 11.06% compared to the reflow soldered module, which guarantees its long-term stable operation in high-power power conversion systems.