P‐25: Tailoring the Threshold Voltage Control of Oxide Thin‐Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure

The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin‐film transistors (TFTs), we propose heterojunction structure of p‐type Tellurium (Te) and n‐type Aluminum‐Doped Indium‐Zinc‐Tin‐Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single / double deposition of the heterojunction Te layer.