This article presents a 23-GHz transmitter/low-noise amplifier (TX/LNA) front-end module (FEM) in 130-nm SiGe BiCMOS for inter-satellite links (ISLs) in the system of orbiting low-frequency antenna array (OLFAR). The FEM consists of an LNA, a power amplifier (PA), a variable-gain amplifier (VGA), a phase shifter (PS), and a TX/receiver switch (T/R SW). By applying the combination of different techniques: 1) multi-function block design strategy; 2) current reuse and <tex-math notation="LaTeX">gₘ</tex-math> boosting implemented by a triple-coil transformer in the LNA; 3) dual-LC-tank-based integrated T/R SW, a compact FEM is achieved, simultaneously with an advanced-state-of-the-art efficiency in the TX path and a competitive noise figure (NF) in the receiver (RX) path. In the TX path, it demonstrates a measured saturated output power ( <tex-math notation="LaTeX">Pₛₐₜ)</tex-math> of 16.8 dBm, a peak TX efficiency of 27.8%, and a 34.1-dB gain. It supports 900-Mbps 64-QAM signals with 4.9% error vector magnitude (EVM) and <tex-math notation="LaTeX">$-$</tex-math> 27.5-dBc adjacent channel power ratio (ACPR), at 9.0-dBm output power ( <tex-math notation="LaTeX">Pₒᵤₜ)</tex-math> with 8.8% TX efficiency. In the RX path, an NF of 3.1 dB and an input 1-dB compression point (IP <tex-math notation="LaTeX">1~dB)</tex-math> of <tex-math notation="LaTeX">$-$</tex-math> 19.4 dBm are achieved with a 19.3-dB gain and a 10-mW power consumption. The core chip area is 1.11 <tex-math notation="LaTeX">×</tex-math> 0.48 mm.
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Ding et al. (2024) studied this question.
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