An InGaAs-based Fin-EHBTFET with heterogate and barrier layer for high performance

This paper proposes a fin electron-hole bilayer tunneling FET with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source–drain direct tunneling, significantly reducing the off-state current ( I off ). P-type Gaussian doping can not only solve the problem of the inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing ( SS avg ). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain I off of 2.37 × 10 −16 A μ m −1 , SS avg of 17.97 mV dec −1 , a cutoff frequency ( f T ) of 13.2 GHz, and a gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in I off by four orders of magnitude, a decrease in SS avg by 65.27%, and an increase in f T and GBW by 78.59% and 93.62%, respectively.