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In this letter, CsPbBr 3 wafers are obtained through the pressure-induced aggregation of CsPbBr 3 powder and further modified through a high-temperature atomized water (HTAW) treatment strategy for the first time. Such a strategy helps to the reconstruction of CsPbBr 3 grains in the HTAW environment and thus the densification of the wafer surface. The as-fabricated wafers were used to develop X-ray detectors that exhibited a dark resistivity of 2.43 × 10 9 Ω, sensitivity of 143845.34 μC Gy air -1 cm -2 at 20 V bias, and detection limit of 121.21 nGy s -1 , which are greatly improved than those of the pristine CsPbBr 3 wafers and among the highest performance of reported CsPbBr 3 perovskite X-ray detectors. Our work provides a reliable strategy for optimizing finished perovskite wafers and enhancing the performance of X-ray detectors.
Ba et al. (Tue,) studied this question.
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