This letter proposes a wafer-level packaged (WLP) single-chip sequential rotation Crossbar (SR-Crossbar) RF MEMS switch matrix, which has been fabricated and measured. Optimizations are conducted on switch units, including electrically connected seal ring design, DC-RF common ground design, and integrated cross design. The designs effectively simplify the fabrication process and improve compactness of the matrix. Measurements demonstrate that insertion loss of the longest path in this 8×8 SR-Crossbar RF MEMS switch matrix maintains better than -19dB within 0-26.5GHz range. Return loss is better than -18dB, and crosstalk and isolation are both better than -20dB. To the best of the authors' knowledge, this is the first fabricated single-chip large-scale RF MEMS switch matrix with wafer-level packaging, which exhibits significant performance advantages compared to relevant works.
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Zhou et al. (2024) studied this question.
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