We calculate the dwell time for electron in a magnetic nanostructure with zero average magnetic fields, which is obtained by fabricating three nanosized ferromagnetic stripes on top or bottom of InAs/AlxIn1–xAs. A spin-dependent dwell time is found thanks to the spin–field interaction, which can be used to separate electron-spins in time dimension. Spin-polarised dwell time can be improved by properly patterning ferromagnetic stripes. Such a novel magnetic nanostructure can serve as a temporal spin splitter in the area of semiconductor spintronics.
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Wei et al. (2024) studied this question.
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