Quantitative analysis of remaining reaction byproducts from wafer processing can indicate sensitivity of patterning processes against humidity and sitting time, and suggest subsequent method for preventing manufacturing failure. However, due to its inherent nature of wafer outgassing, obtaining quantitative information with controlled standard deviation is highly challenging. In this study, we adopt 1 st order ordinary differential equation to interpret time-dependent wafer outgassing profile in the Front Opening Unified Pod (FOUP) using in-line measurement tool, and thereby derive outgassing rate. Compared with the previous method, the calculated outgassing rate showed reduced deviation between samples, by approximately 21.0%.
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Yang et al. (2024) studied this question.
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