A GaN-based SOI plasmonic nanolaser design with high-output power

Due to its unique optical and electrical properties, gallium nitride (GaN) exhibits great promise for nanolaser cavities. These characteristics include high electron mobility, wide bandgap energy, and a high refractive index. Moreover, GaN exhibits remarkable thermal stability, making it appropriate for high-power laser applications. The choice of active medium material can significantly impact the laser’s performance, including its wavelength, output power, and efficiency. This work designed and numerically demonstrated a GaN-WG built-in Si O 2 substrate with an input and output Si-waveguide nanolaser. These nanolasers lase multi-output wavelengths in both directions (forward and backward) at 1680 and 1750 nm, respectively. The pump power is 800 nm. The GaN-waveguide material, when used in nanolaser cavity design, gives many different advantages, like concentration of the Gaussian envelope and improved polarization depending on rate (PDR). Increasing lasing efficiency by 76.6% in the forward direction and 96.7% in the backward direction. Get a low lasing threshold of approximately 200 μ W in the forward direction and 180 μW in the μ W backward direction. Finally, improved the output laser power in both directions (460 μ W and 600 μ W) in the forward and backward directions, respectively.