Optimized Electrothermal Drain Current Modeling of GaN-Based HEMT

GaN High Electron Mobility Transistors (HEMTs) is a high-power device that requires electrothermal modeling for the drain current. The accuracy of the large signal device depends on the drain current model. This paves the way for reliable circuit design. This paper proposes a Whale Optimization Algorithm (WOA) powered analytical model. The model has been implemented to Imm GaN HEMT. The results have been compared with two well-known models: Curtice and Islam-Zaman model. The proposed model has been optimized in three phases using WOA. The first phase did not encounter thermal parameter, K <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> • In the second phase KTH introduced for the first time and in the third phase all the parameters of the model were tuned for the most precise and optimized parameter values to get the best fitting. The results indicate the ease of using the optimization algorithm for extracting the model parameter. Large signal modelling applications will be greatly benefitted from the result of this paper.