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Interface modification is a promising technique for enhancing electrical parameters of Organic Field Effect Transistor (OFETs). In OFETs, self-assembled monolayer molecules are widely used for treatment dielectric/semiconductor interface layer. Modification of dielectric/semiconductor layer with SAM molecules ensures a variety of potential applications. Boronic acids with four different alkyl chain lengths ( C n -BA; n = 8, 10, 12, 14 ) molecules were used in this study to treat the Al 2 O 3 dielectric surface in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) based OFETs. Treated with SAMs improve the mobility of Al 2 O 3 surfaces for linear and saturation regime and threshold voltages shifted from positive direction. The morphological and electrical characterizations were performed for fabricated OFET. The results show that alkyl-boronic acids SAM molecules open a new perspective for further optoelectronic applications due to its application for oxide surfaces and controllability.
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Tuğbahan Yılmaz (2024) studied this question.
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