Strong Damping-Like Torques in Wafer-Scale MoTe₂ Grown by MOCVD

The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T^ phase MoTe₂ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T^ MoTe₂ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C₄H₉)₂Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T^ and 2H MoTe₂ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T^ MoTe₂ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T^ MoTe₂/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T^ MoTe₂ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.