Physical Analysis of Lateral-BTBT Induced GIDL Current in GaN-Based FinFET Devices

In this paper, we have analyzed the behavior of the Lateral-BTBT component of gate-induced drain leakage (GIDL) current on various configurations of GaN FinFET with High-k oxide which are Bulk-GaN FinFET, JAM-GaN FinFET and JL-GaN FinFET. It also studied how, in the OFF state (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> =0), Lateral-BTBT causes parasitic BJT to form for different configurations. It was also observed that parasitic BJT phenomena are significant only in JAM-GaN FinFET and Bulk- GaN FinFET. JL-GaN FinFET offers minimum leakage current and maximum Ion/Ioff ratio which is ∼6.5 × 10 9 . In addition, the effect of variation in source and drain doping on Bulk-GaN FinFET and JAM-GaN FinFET and their energy band profile are also studied.