Microstructured large-area photoconductive terahertz emitters driven at high average power

Emitters based on photoconductive materials excited by ultrafast lasers are well-established and popular devices for THz generation. However, so far, these emitters - both photoconductive antennas and large area emitters - were mostly explored using driving lasers with moderate average powers (either fiber lasers with up to hundreds of milliwatts or Ti:Sapphire systems up to few watts). In this paper, we explore the use of high-power, MHz repetition rate Ytterbium (Yb) based oscillator for THz emission using a microstructured large-area photoconductive emitter, consist of semi-insulating GaAs with a 10 × 10 mm