The advent of Horizontal Gate-All-Around (hGAA) technologies for advanced logic CMOS nodes introduces new technology challenges and opportunities. In this invited talk, we focus on disruptive process technology innovation enabling performance improvements at scaled dimensions. In particular, after quantifying the key contributors to the device external resistance, we present the concepts of various process technology innovations, and discuss experimental results. A particular emphasis will be given to the area of epitaxial source/drain, contact interface and silicide engineering.
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N. Breil (2024) studied this question.
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