This talk introduces a high-frequency integrated gate driver for a gallium nitride (GaN) synchronous buck converter. Compared with Si devices, GaN devices are more ideal switches. Thus, converters with GaN devices have the potential to achieve high switching frequency, efficiency, and power density. However, there are many challenges associated with the integrated gate driver to enable the potential of GaN devices. In this talk, some challenges and solutions will be introduced including adaptive dead-time control and on-chip bootstrap capacitor reduction.
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Ching‐Jan Chen (2024) studied this question.
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