Modeling and Simulation of Carrier Transport Properties in 4H-SiC

Silicon carbide (SiC) is an attractive wide bandgap semiconductor for energy-efficient power devices. This paper discusses the modeling and simulation of carrier transport phenomena in 4H-SiC. First, a model for the carrier scattering mechanisms in the 4H-SiC MOS inversion layers is introduced, and the simulation results of the electron Hall mobility in the inversion layers are presented. The simulation reasonably reproduces the experimentally reported behaviors of the Hall mobility. The high-field carrier transport properties in bulk 4H-SiC are also discussed.