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Oxide growth of Al2O3 and TiO2 as well as O dissolution during the oxidation of an α-Ti alloy at 973 K were simulated using the finite volume method coupled with the calculation of phase diagrams (CALPHAD) method. The results indicated that the addition of 11.02 at.% Al to a Ti–O system resulted in the formation of an 18-nm-thick Al2O3 layer, which decelerated TiO2 growth and O dissolution in the substrate. An increase in the O concentration at the oxide–metal interface was also inhibited by Al2O3 formation. A thin Al-depletion zone was formed at the oxide–metal interface. Furthermore, Al2O3 formation was restricted by the low concentration and diffusivity of Al in the substrate.
Kitashima et al. (Sat,) studied this question.