Electrical transport properties of Cu2ZnSnSe4 thin films for solar cells applications

In this work we study the electrical transport properties of Cu2ZuSnSe4 (CZTse) thin films. CZTSe thin films were prepared by PVD method; the parameters of deposition as substrate temperature (T,) and mass, (Mx), (Mx = ZnSe, Cu) were varied for a range wide. Conductivity and resistivity measurements as a function of temperature were obtained between 120 and 400 K. It was observed, that high-temperature range above room temperature (>300 K) the carrier transport is thermally activated, with a single activation energy that changes with the variation of T, and Mx. In the low-temperature range (<300 K)), variable range hopping (VRH) was established as a predominant electronic transport mechanism for all samples. Hoppmg parameters were obtained by Difíusinal model and percolation theory.