Due to the shrinking size of chip devices, the current density carried by redistribution layer (RDLs) increases. We used titanium dioxide (TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) as the passivation layer to enhance the lifetime of electro migration. The lifetime of TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -capped NT-Cu RDLs increased about 2 times compared to those coated with polyimide (PI). In this study, we found the mechanism of failure on NT-Cu RDLs capped with TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> was the electro migration-induced voiding combined with the stress migration.
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Lin et al. (2024) studied this question.
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