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April 17, 2024NanotechnologyOpen Access

Magneto-transport in the monolayer MoS₂ material system for high-performancefield-effect transistor applications

Anup Kumar Mandia Rohit Kumar Seung‐Cheol Lee Satadeep Bhattacharjee Bhaskaran Muralidharan

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Electronic transport in monolayer MoS

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Mandia et al. (2024) studied this question.

synapsesocial.com/papers/68e6ebeab6db6435876672aa https://doi.org/10.1088/1361-6528/ad3fc2

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1In‐plane ferroelectrics enabling reduced hysteresis in monolayer MoS<sub>2</sub> transistors2024 · 8 citations
2Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate2024 · 1 citations
3Field-induced charge separation dynamics in monolayer MoS 2Original Research · 2017 · 10 citations
4Device simulation study of multilayer MoS<sub>2</sub> Schottky barrier field-effect transistors2024
5Large Unsaturated Magnetoresistance in Gated MoS <sub>2</sub> FlakesOriginal Research · 2026 · 3 citations

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