Anisotropic Nonsaturating Magnetoresistance Observed in HoMn₆Ge₆: A Kagome Dirac Semimetal

We report the magnetic and magnetotransport properties and electronic band structure of the kagome Dirac semimetal HoMn₆Ge₆. Temperature-dependent electrical resistivity demonstrates various magnetic-transition-driven anomalies. Notably, a crossover from negative to positive magnetoresistance (MR) is observed at around 150 K. While the linear nonsaturating positive MR in the low-temperature region is mainly driven by the linear Dirac-like band dispersions as predicted by the first-principles calculations, the negative MR observed in the high-temperature region is due to the spin-flop type magnetic transition. Consistent with anisotropic Fermi surface topology, we observe anisotropic magnetoresistance at low temperatures. A significant anomalous Hall effect has been noticed at high temperatures in addition to a switching of the dominant charge carrier from electron to hole at around 215 K.