Development Status of Laser-Induced Peel-Off Transfer Technology for Advanced Semiconductors

Expanding and increasing the number of data centers are essential considering the explosion of data amount, and power shortages have become a big challenge as a result. Optical networking of server infrastructure and development of advanced semiconductors for edge computing to reduce data volumes are accelerating. Among the various developments of semiconductors in progress, especially advanced semiconductors, which reduce the data amount, such as next-generation power device and silicon photonics, require transfer technologies of ultra-thin chips, which have been difficult in the past. To address such requirements, laser-induced peel-off transfer technology (Laser Peel Transfer: LPT) is proposed. We carried out transfer experiments by LPT using 5mm square silicon chips, a typical size for semiconductor chips, processed to a thickness of 10μm, As a result, no damage to the chips and high transfer accuracy were confirmed.