A hybrid vanadium dioxide/silicon (VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si) device with multilevel volatile-memory operation is demonstrated by exploiting the VO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> phase transition hysteresis. The device can reach up to 32 levels with an ultra-compact length and insertion losses of 2.5 dB.
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Seoane et al. (2024) studied this question.
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