We investigated single hexagonal silicon -germanium nanowires using photoluminescence spectroscopy. We observe stimulated emission at a threshold at 0.2 mJcm -2 , with a net optical gain at -294 cm -1 below the gain threshold. This puts hex-SiGe close to lasing, opening the path to a silicon-based nanolaser.
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Tilburg et al. (2024) studied this question.
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