Direct bandgap Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.86</inf> Sn <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.14</inf> photodiodes were fabricated on Si substrates using layer transfer. The layer transfer did not degrade the noise of the initial photodiode stacks, while the underlying metallic mirrors improved the responsivity at 300 K by a factor of 2.9 at 2.5 µm.
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Cardoux et al. (2024) studied this question.
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