A W-Band Phase-Change RF Switch Based on Germanium Telluride Material

In this paper, we report a new GeTe-based RF switch, which operates in the W frequency band. This switch is a four-terminal indirectly heated PCS composed of classical seven-layer structures. The tungsten thin film as a micro-heater is embedded into a dielectric barrier layer to remove the stages on the edge of a phase-change layer, which can improve the reliability of this switch. By optimizing structure and size, the proposed PCS obtains a good performance. Finally, the insertion loss of the PCS is below 0.6 dB, and the isolation is above 10 dB over a 1-110 GHz millimeter-wave (mmWave) band.