Study of SiO₂ films implanted with ⁶⁴Zn⁺ ions and oxidized at elevated temperatures

The results of studying SiO2 films implanted with 64Zn ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide were studied using Rutherford backscattering and time-of-flight secondary ion mass spectrometry. The chemical state of zinc and the phase composition of the film were determined by Auger electron spectroscopy and Raman scattering. It was found that after implantation, the zinc distribution had two maxima at depths of 20 and 85 nm, and after annealing at 700°C there was a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases was formed in the sample. After annealing at 700°C, only the ZnO phase was formed in the sample, the distribution profile of which had a broadened peak at 45 nm.