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We evaluate the soft error rate (SER) in 18 nm FDSOI-planar SRAM and investigate the scaling trend of SER in FDSOI-planar. Our findings demonstrate that the SER in 18 nm FDSOI-planar is significantly lower than that of 28 nm FDSOI-planar. The total SER (alpha SER + neutron SER) in SRAM of 18 nm FDSOI-planar is lower than all the bulk-planar and bulk-FinFET technologies. We also examine the temperature dependence of SER in FDSOI-planar.
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Uemura et al. (2024) studied this question.
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