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A simplified methodology to link CW (Continuous Wave) RF stresses to complex mission profiles is presented in order to compare the lifetimes of different 40nm PDSOI Power Amplifier (PA) cells, versus bias and under different 5G-FR2 modulation profiles. The best lifetime is achieved when using the most complex 5G modulation due to output power/linearity constraints. VT drift correction is also identified as a powerful tool to increase transistor HCI lifetime under PA operation.
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Divay et al. (2024) studied this question.
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