In Situ Growth of (−201) Fiber‐Textured β‐Ga₂O₃ Semiconductor Tape for Flexible Thin‐Film Transistor

High‐temperature in situ growth of Ga 2 O 3 thin film on flexible substrates for flexible/portable electronic devices is never realized because the conventional polymer substrates cannot meet the thermal‐stability requirements. In the research, for the first time, Ga 2 O 3 thin films are directly grown on SiO x /Al 2 O x buffered Hastelloy substrates. With pulsed laser deposition under high temperature, as‐grown Ga 2 O 3 thin films have a fabric texture with a preferred out‐of‐plane orientation along (−201) and a good field‐effect mobility of 18.07 cm 2 V −1 s −1 . The Ga 2 O 3 coated tape is patterned with transistor arrays and exhibited good performance homogeneity. The representative transistor devices have a threshold voltage of ≈−2.75 V and a breakdown voltage of 116 V measured under a −20 V gate voltage. Moreover, the tape transistors also have good mechanical robustness. The transistors’ good electrical performance, high uniformity, and mechanical robustness suggest that the in situ deposition technique using Hastelloy tape is promising for fabricating various flexible Ga 2 O 3 channeled electronic circuits. Furthermore, it is believed that this technique can be extended to other flexible semiconductor devices that require high‐temperature processing.