Diamond with nitrogen, silicon and other group IV vacancies have been receiving attention as single-photon sources for various quantum applications. Typically, diamond is prepared by epitaxial methods and the desired vacancies are incorporated by in situ doping or ion implantation. Here we prepare diamond by plasma jet printing from nanodiamond ink and incorporate silicon also by printing using a nanoparticle ink. Printed diamond films exhibit all the characteristic Raman, X-ray diffraction and photoluminescence (PL) features commonly seen in epitaxially-grown films. Printed silicon films are crystalline and when printed on diamond, silicon incorporation shows the characteristic silicon vacancy PL peak.
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Doshi et al. (2024) studied this question.
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