On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past

In this article, a non-quasi-static (NQS) nonlinear transistor model oriented to <tex-math notation="LaTeX">E</tex-math> -band power amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave NQS behavior is proposed and the entire model extraction procedure is detailed with the aim of putting in evidence the specific issues posed by working at millimeter-wave frequencies. The model is used in the design of a family of monolithic microwave integrated circuit (MMICs) for realizing complete system-in-package (SIP) transmitter and receiver. The model is first fully validated at transistor level by comparing its predictions with linear and nonlinear measurements, and then with measurements carried out on the realized MMIC amplifiers at <tex-math notation="LaTeX">E</tex-math> -band.