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Abstract The detrimental effect of imprint, which can cause misreading problem, has hindered the application of ferroelectric HfO 2 . In this work, we present results of a comprehensive reliability evaluation of Hf 0.5 Zr 0.5 O 2 -based ferroelectric random access memory. The influence of imprint on the retention and endurance is demonstrated. Furthermore, a solution in circuity is proposed to effectively solve the misreading problem caused by imprint.
Yuan et al. (Mon,) studied this question.