P‐12.6: Quantum Dot Light‐Emitting Diodes with Sputtered TiO₂ as Electron Transport Layer

Quantum dot light‐emitting diodes (QLEDs) is one of the most important components in the display field, and different structures have a certain impact on the final performance of the device. Previous QLEDs mainly use ZnO nanocrystals as the electron transport layer (ETL), but the chemical activity of ZnO nanocrystals under electric fields and moisture is not stable enough. To solve this problem, this paper studies the effects of TiO 2 films with different thicknesses on the luminescence, current density and external quantum efficiency of QLED devices by using magnetron sputtered TiO 2 as a new ETL. The experimental results show that the 50nm TiO 2 film achieves the highest external quantum efficiency while maintaining favorable current density and brightness.