Using a complex of structural analysis methods and the study of luminescent properties, epitaxial films (0001) ZnO on (0001) LaMgAl11O19 have been investigated. It is shown that local overheating of the surface of LaMgAl11O19 crystals during exposure to high-energy electrons leads to a shift of the peak of ZnO exciton luminescence to the 400 nm area. The presence of intense luminescence bands in the luminescence spectrum of LaMgAl11O19 with maximums at 360 and 430 nm, respectively, which are associated with defects of type F+ and F was found out. Compared to similar color centers in sapphire, their radiation bands are widened and shifted to the long-wave region. An increase in exposure time in the electron stream leads to an increase in the intensity of red luminescence of LaMgAl11O19 crystals.
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Исмаилов et al. (2020) studied this question.
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