Preparation and characterization properties of pentacene thin film transistors pre and post optimization of dielectric surface

In this paper, a transistor with Si as the substrate, SiO₂ as the dielectric layer, and Pentacene as the organic layer, and Au as the source-drain electrode was designed and prepared, and the dielectric layer was optimized by spin-coating a layer of PMMA. Subsequently, the transistors pre and post optimization were characterized by Raman detection, white light interferometric detection, XRD and other characterization tests, which verified that the optimized Pentacene film has better properties. Finally, electrical measurements of the two devices were carried out using an electrochemical platform. The output versus transfer characteristic curves derived from the tests confirmed that the PMMA-optimized parallel Pentacene thin-film transistors had enhanced mobility, boost significantly lower threshold voltage, and reformed device performance.