Domain Engineering Concepts enabled by Topological Defects

The functionality of ferroelectric materials is intricately linked to their domain morphology. Recent research has unveiled dislocations and precipitates as effective tools for controlling the domains in ferroelectrics. Furthermore, topological electric structures are attracting attention, giving conceptually new opportunities for domain engineering. Here, we explore the possibility to use topologically protected vortex/anti-vortex structures to tailor the ferroelectric domains in polycrystalline hexagonal manganites. Unlike conventional ferroelectrics, like BaTiO3 and Pb(Zr,Ti)O3, we observe an inverted scaling behavior where larger grains yield smaller domains. This atypical scaling behavior is explained based on the interplay of the topologically protected vortices with elastic strain fields. We further demonstrate the harnessing of this unique interaction to engineer domain structures via external elastic stresses. The synergy of elastic strain and topological defects offers a novel approach for tailoring the electromechanical and dielectric performance of ferroelectrics, enhancing their potential in capacitor applications and domain wall-based nanoelectronics.