Dual-Gate Operation and Configurable Logic From Solution Pattern-Based Zinc Tin Oxide Thin-Film Transistors

The development of semiconductor technology is stimulating a significant amount of research into the synthesis of semiconductors and the structural aspects of devices. The liquid solution-based film patterning technology and dual-gate technology are considered promising because of their benefits of low cost and mass-production. At the same time, dual-gate extends the control of an existing device with the additional gate, offering the suitable device characteristics for various applications. The separate gates can offset or enhance the electric fields of each other to systematically control the density of charge inside the channel. In this study, a zinc-tin oxide (ZTO) thin-film transistor (TFT) fabricated via oxide semiconductor synthesis by solution patterning technology with a dual-gate structure is presented, and the electrical characteristics of the device controlled by dual-gate are presented along with a quantitative analysis by simulation. Furthermore, the fabricated dual-gate TFT demonstrates multifunctional logic circuit operation controlled by the dual-gate function through integration with pull-up transistors.