Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Si j , vacancy V , and O -complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO 2 /Si wafer. A non-destructive method, which allows the determination of the internal friction difference Δ Q − 1 /Q − 1 0 of the elastic vibration of structural defects of dislocations with density N D and the depth of the broken layer h b , is offered for the SiO 2 /Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO 2 /Si disc-shaped wafer with a thickness h SiO 2 ≈ 100 nm, h is = 300 ÷ 500 × 10 3 nm, and diameter D = 60 ÷ 100 × 10 −3 m to measure the structurally sensitive internal friction Q − 1 in vacuum P ≈ 10 −2 Pa. Measurement of the internal friction background Q − 1 0 at harmonic frequencies f 0 and f 2 allowed us to experimentally determine the nodal lines of the oscillating disks.