Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions

We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We obtain the timing and amplitude parameters for the current and field pulses needed to achieve 100 ps range inertia-free switching under least-power dissipation. The considered method does not rely on the stochastics of thermal agitation of the magnetic nanoparticle typically accompanying spin-torque switching. The regime of ultimate switching speed-efficiency found in this work is promising for applications in high-performance nonvolatile memory.