A compact scalable large signal model for GaN Schottky diodes for multicathode application is proposed in this article. The scalable rules for extrinsic and intrinsic model parameters are given in detail. The experimental and theoretical results show that at the same bias condition, good scaling model parameters can be achieved between the diodes with different numbers of cathodes. Model verification is carried out by comparison of measured and simulated dc and <tex-math notation="LaTeX">S </tex-math> -parameters for GaN Schottky diodes.
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Zhang et al. (2024) studied this question.
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