Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO₂ Capacitors

The anti-ferroelectric HfZrO oxide has drawn attention due to its non-volatile characteristics (with a build-in bias) and high dielectric constant which is very important for DRAM applications. Therefore, understanding the evolution of P-V curves during the endurance cycling becomes crucial for evaluating the reliability behaviors of anti - ferroelectric HfZrO capacitors. In this work, we developed an endurance degradation model of anti-ferroelectric HfZrO capacitors. The proposed degradation model demonstrates excellent prediction capability for P-V curve evolution during the endurance cycling with different stress amplitudes.