Full Wafer Combinatorial Deposition With In-Situ XPS/UPS Characterizations

An 8-inch full wafer cluster tool has been developed, consisting of a combinatorial PVD chamber, a combinatorial ALD chamber and a XPS/UPS chamber. The deposition chambers can achieve up to 8 separate deposition sites on one wafer. Within each site, films can be deposited with either reactive co-sputtering up to 4 targets, or with ALD from up to 3 precursors. The deposition is performed one site at a time with independent process parameters. The uniformity is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">< 3.5%</tex> wi thin site and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">< 2%</tex> for site to site. The wafer can be transferred to the XPS/UPS chamber without breaking vacuum, allowing in-situ characterization of film surface compositions, valence states and work-functions. We believe this is the first report of 8-inch full wafer in-situ XPS capability.